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Journal Articles

Method of predicting resist sensitivity for 6.x nm extreme ultraviolet lithography

Oyama, Tomoko; Oshima, Akihiro*; Washio, Masakazu*; Tagawa, Seiichi*

Journal of Vacuum Science and Technology B, 31(4), p.041604_1 - 041604_5, 2013/07

https://doi.org/10.1116/1.4813789
 Times Cited Count：9 Percentile：45.22(Engineering, Electrical & Electronic)

Journal Articles

Initial oxidation of Si(110) as studied by real-time synchrotron-radiation X-ray photomission spectroscopy

Suemitsu, Maki*; Yamamoto, Yoshihisa*; Togashi, Hideaki*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Vacuum Science and Technology B, 27(1), p.547 - 550, 2009/02

https://doi.org/10.1116/1.3021032
 Times Cited Count：4 Percentile：29.68(Engineering, Electrical & Electronic)

Initial oxidation processes of the Si(110) surface and the chemical bonding states of silicon atoms in the initial oxides have been investigated by using real-time synchrotron-radiation photoemission spectroscopy. Time evolutions of the Si$$^{n+}$$ ($$n$$=1-4) components in the Si 2$$p$$ spectrum indicates that the Si$$^{3+}$$ component always overwhelms the Si$$^{4+}$$ component during the oxidation up to one monolayer. This is in sharp contrast to the Si(001) surface where Si$$^{4+}$$ is always larger than Si$$^{3+}$$. The dominance of the Si$$^{3+}$$ component is related to presence of two types of bonds on the Si(110) surface and to their possible different reactivity against insertion of oxygen atoms.

Journal Articles

As-rich InAs(001)-(2$$times$$4) phases investigated by ${it in situ}$ surface X-ray diffraction

Tinkham, B. P.*; Braun, W.*; Ploog, K. H.*; Takahashi, Masamitsu; Mizuki, Junichiro; Grosse, F.*

Journal of Vacuum Science and Technology B, 26(4), p.1516 - 1520, 2008/07

https://doi.org/10.1116/1.2918314
 Times Cited Count：3 Percentile：26.1(Engineering, Electrical & Electronic)

Journal Articles

Novel electron-beam-induced reaction of a sulfonium salt in the solid state

Enomoto, Kazuyuki*; Moon, S.*; Maekawa, Yasunari; Shimoyama, Junji*; Goto, Kazuyuki*; Narita, Tadashi*; Yoshida, Masaru

Journal of Vacuum Science and Technology B, 24(5), p.2337 - 2349, 2006/09

https://doi.org/10.1116/1.2338046
 Times Cited Count：5 Percentile：33.55(Engineering, Electrical & Electronic)

The electron beam (EB)-induced reaction of triphenylsulfonium methanesulfonate (1-Ms) in the solid state afforded the benzene-substituted product, biphenyldiphenylsulfonium methanesulfonate (2-Ms), which has not been observed by either photolysis or EB-induced reaction in a solution. The kinetic data revealed that the biphenyl salt 2-Ms exhibited 3.7 times greater kinetic constants for consumption than that of 1-Ms. The EB-induced reaction of benzene-substituted triphenylsulfonium salts, p-biphenyldiphenylsulfonium methanesulfonate (2p-Ms) and (4-phenylthiophenyl)diphenyl- sulfonium methanesulfonate (7) showed the consumption rates of 3.8 and 5.7 times greater than that of 1-Ms. The sulfonium salts with aromatic counter anions showed somewhat higher reactivity than those with aliphatic counter anions. Accordingly, it is concluded that the triphenylsulfonium salts having aryl groups, which exhibit lower ionization potential (Ip), in both cation and anion moieties should exhibit greater decomposition rates.

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